View ss8550 datasheet:

SS8550SS8550 TRANSISTORPNP FEATURES Complimentary to SS8050 SOT-23 1BASE MARKING: Y2 2EMITTER 3COLLECTOR MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage -40 VVCEO Collector-Emitter Voltage -25 VVEBO Emitter-Base Voltage -5 VIC Collector Current -Continuous -1.5 APC Collector Power Dissipation 0.3 W Tj Junction Temperature 150 Tstg Storage Temperature -55-150ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) Parameter Symbol Test conditions MIN MAX UNITCollector-base breakdown voltage V(BR)CBO IC=-100A, IE=0 -40 VCollector-emitter breakdown voltage V(BR)CEO IC=-0.1mA, IB=0 -25 VEmitter-base breakdown voltage V(BR)EBO IE=-100A, IC=0 -5 VCollector cut-off current ICBO VCB=-40V, IE=0 -0.1 ACollector cut-off current ICEO VCE=-20V, IB=0 -0.

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 ss8550.pdf Design, MOSFET, Power

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