All Transistors. Datasheet

 

View ss8550 sot-23 datasheet:

ss8550_sot-23ss8550_sot-23

SS8550 SOT-23 Transistor(PNP)SOT-231. Base 2.Emitter 3.Collector FeaturesComplimentary to SS8050 MARKING: Y2 MAXIMUM RATINGS (TA=25 unless otherwise noted) Dimensions in inches and (millimeters)Symbol Parameter Value UnitsVCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -25 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -1.5 A PC Collector Power Dissipation 0.3 W Tj Junction Temperature 150 Tstg Storage Temperature -55-150 ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) Parameter Symbol Test conditions MIN MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=-100A, IE=0 -40 VCollector-emitter breakdown voltage V(BR)CEO IC=-0.1mA, IB=0 -25 VEmitter-base breakdown voltage V(BR)EBO IE=-100A, IC=0 -5 VCollector cut-off current ICBO VCB=-40V, IE=0 -0.1 A Collector cut

 

Keywords - ALL TRANSISTORS DATASHEET

 ss8550 sot-23.pdf Design, MOSFET, Power

 ss8550 sot-23.pdf RoHS Compliant, Service, Triacs, Semiconductor

 ss8550 sot-23.pdf Database, Innovation, IC, Electricity

 

 
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