All Transistors. Datasheet

 

View ss8550b datasheet:

ss8550bss8550b

SS8 550TRANSISTOR(PNP)SOT-323 FEA TURES Complimentary to SS8050 1. Base MARKING: Y2 2. Emitter 3. Collector MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -25 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -1.5 A PC Collector Power Dissipation 0.2 W Tj Junction Temperature 150 Tstg Storage Temperature -55-150 ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) Parameter Symbol Test conditions MIN MAX UNITCollector-base breakdown voltage V(BR)CBO IC=-100A, IE=0 -40 VCollector-emitter breakdown voltage V(BR)CEO IC=-0.1mA, IB=0 -25 VEmitter-base breakdown voltage V(BR)EBO IE=-100A, IC=0 -5 VCollector cut-off current ICBO VCB=-40V, IE=0 -0.1 A Collector cut-off current ICEO VCE=-20V, IB=0 -0.1 A

 

Keywords - ALL TRANSISTORS DATASHEET

 ss8550b.pdf Design, MOSFET, Power

 ss8550b.pdf RoHS Compliant, Service, Triacs, Semiconductor

 ss8550b.pdf Database, Innovation, IC, Electricity

 

 
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