View ss8550t datasheet:

SS8550TPNP SiliconElektronische Bauelemente General Purpose TransistorRoHS Compliant ProductA suffix of "-C" specifies halogen & lead-freeTO-92FEATURESPower dissipationPCM : 1 WCollector CurrentICM : -1.5 A1Collector-base voltage 23V(BR)CBO : - 40 V12 3Operating & storage junction temperature1O OTj, Tstg : - 55 C ~ + 150 C1. EMITTER22. BASS3 . COLLECTOR3OELECTRICAL CHARACTERISTICS ( Tamp.=25 C unless otherwise specified)Parameter Symbol Test conditions MIN TYP MAX UNITCollector-base breakdown voltage V -40 V(BR)CBO Ic= -100A I =0ECollector-emitter breakdown voltage V Ic= -25 V(BR)CEO -0.1mA I =0BEmitter-base breakdown voltage V -5 V(BR)EBO I =-100A I =0E CCollector cut-off current I V =-40 V , I =0 -0.1CBO CB E ACollector cut-off current I V =-20V , I =0 -0.1CEO CE B AEmitter cut-off c

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