View st13007 datasheet:

ST 13007 NPN Silicon Transistor for high voltage, high-speed power switching application TO-220 Plastic PackageOAbsolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value UnitCollector Base Voltage VCBO 700 VCollector Emitter Voltage VCEO 400 VEmitter Base Voltage VEBO 9 VCollector Current IC 8 AOTotal Power Dissipation (Ta = 25 C) Ptot 2 WOTotal Power Dissipation (TC = 25 C) Ptot 80 WOJunction Temperature Tj 150 C OStorage Temperature Range Tstg - 55 to + 150 C OCharacteristics at Ta = 25 C Parameter Symbol Min. Max. UnitDC Current Gain hFE 8 40 -at VCE = 5 V, IC = 2 A Collector Base Cutoff Current ICBO - 1 mAat VCB = 700 V Emitter Base Cutoff Current IEBO - 1 mAat VEB = 9 V Collector Base Breakdown Voltage V(BR)CBO 700 - Vat IC = 1 mA Collector Emitter Breakdown Voltage V(BR)CEO 400 - Vat IC = 10 mA Emitter B

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