View st2sa1012 datasheet:

ST 2SA1012 PNP Silicon Epitaxial Planar Transistor for high current switching applications. The transistor is subdivided into two group, O and Y, according to its DC current gain. TO-220 Plastic Package OAbsolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value UnitCollector Base Voltage -VCBO 60 VCollector Emitter Voltage -VCEO 50 VEmitter Base Voltage -VEBO 5 VCollector Current -IC 5 APower Dissipation Ptot 25 WOJunction Temperature Tj 150 C OStorage Temperature Range Ts -55 to +150 C OCharacteristics at Tamb = 25 C Parameter Symbol Min. Typ. Max. UnitDC Current Gain at -VCE = 1 V, -IC = 1 A O hFE 70 - 140 - Y hFE 120 - 240 - at -VCE = 1 V, -IC = 3 A hFE 30 - - - Collector Emitter Breakdown Voltage -V(BR)CEO 50 - - V at -IC = 10 mA Collector Cutoff Current -ICBO - - 1 Aat -VCB = 50 V Emitter Cutoff Current -IEBO -

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