View stb10n60m2 std10n60m2 stp10n60m2 stu10n60m2 datasheet:
STB10N60M2, STD10N60M2, STP10N60M2, STU10N60M2N-channel 600 V, 0.550 typ., 7.5 A MDmesh II Plus low Qg Power MOSFETs in DPAK, DPAK, TO-220 and IPAK packagesDatasheet - production dataFeaturesTABTABRDS(on) 3 Order codes VDS @ TJmax max ID131DPAKSTB10N60M2D 2 PAKSTD10N60M2650 V 0.600 7.5 ASTP10N60M2TABTABSTU10N60M23 Extremely low gate charge21 Lower RDS(on) x area vs previous generation32IPAK1 Low gate input resistanceTO-220 100% avalanche tested Zener-protectedFigure 1. Internal schematic diagram, TABApplications Switching applicationsDescriptionThese devices are N-channel Power MOSFETs developed using a new generation of MDmesh technology: MDmesh II Plus low Qg. These revolutionary Power MOSFETs associate a vertical structure to the company's strip layout to yie
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stb10n60m2 std10n60m2 stp10n60m2 stu10n60m2.pdf Design, MOSFET, Power
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