View std27n3lh5 stp27n3lh5 stu27n3lh5 datasheet:
STD27N3LH5, STP27N3LH5STU27N3LH5N-channel 30 V, 0.014 , 27 A, DPAK, IPAK, TO-220STripFET V Power MOSFETFeaturesType VDSS RDS(on) max ID33STD27N3LH5 30 V 0.019 27 A 121STP27N3LH5 30 V 0.020 27 A IPAK DPAKSTU27N3LH5 30 V 0.020 27 A RDS(on) * Qg industry benchmark Extremely low on-resistance RDS(on) Very low switching gate charge3 High avalanche ruggedness21TO-220 Low gate drive power lossesApplicationFigure 1. Internal schematic diagram Switching applicationsD (TAB or 2)DescriptionThis STripFETV Power MOSFET technology is among the latest improvements, which have been especially tailored to achieve very low on-state resistance providing also one of the best-in-class figure of merit (FOM).G (1)S (3)sc08440Table 1. Device summaryOrder codes Marking Package PackagingSTD27N3L
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