View stl10n60m2 datasheet:

STL10N60M2N-channel 600 V, 0.580 typ., 5.5 A MDmesh II Plus low Qg Power MOSFET in a PowerFLAT 5x6 HV packageDatasheet - production dataFeaturesVDS @ Order codeTJmax RDS(on) max IDSTL10N60M2 650 V 0.660 5.5 A Extremely low gate charge123 Lower RDS(on) x area vs previous generation4 Low gate input resistancePowerFLAT 5x6 HV 100% avalanche tested Zener-protectedApplicationsFigure 1. Internal schematic diagram Switching applicationsD(5, 6, 7, 8)8 7 6 5DescriptionThis device is an N-channel Power MOSFET developed using a new generation of MDmesh G(4)technology: MDmesh II Plus low Qg. This revolutionary Power MOSFET associates a vertical structure to the company's strip layout to yield one of the world's lowest on-resistance and 1 2 3 4gate charge. It is therefore suitable for the mos

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