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View stp55nf06 datasheet:

stp55nf06stp55nf06

INCHANGE Semiconductorisc N-Channel MOSFET Transistor STP55NF06DESCRIPTIONWith TO-220F packaging100% avalanche testedFast switching speedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSMotor controlAudio amplifiersDC-DC&DC-AC convertersABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Drain-Source Voltage (V =0) 60 VDSS GSV Gate-Source Voltage 20 VGSDrain Current-continuous@ TC=25 50I ADDrain Current-continuous@ TC=100 35P Total Dissipation@TC=25 30 WtotT Max. Operating Junction Temperature 175 jT Storage Temperature Range -55~175 stgTHERMAL CHARACTERISTICSSYMBOL PARAMETER MAX UNITThermal Resistance,Junction to Case 5 /WRth j-c/WR Thermal Resistance,Junction to Ambient 62.5th j-a1isc websitewww.iscsemi.com isc & i

 

Keywords - ALL TRANSISTORS DATASHEET

 stp55nf06.pdf Design, MOSFET, Power

 stp55nf06.pdf RoHS Compliant, Service, Triacs, Semiconductor

 stp55nf06.pdf Database, Innovation, IC, Electricity

 

 
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