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stt03n10stt03n10

GreenProductSTT03N10aS mHop Microelectronics C orp.Ver 1.0N-Channel Logic Level Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) (m) TypRugged and reliable.235 @ VGS=10VSurface Mount Package.100V 2.5A300 @ VGS=4.5V D G GSSTT SERIES S SOT - 223 ABSOLUTE MAXIMUM RATINGS (TA=25C unless otherwise noted)Symbol Parameter UnitsLimitVDSDrain-Source Voltage 100 VVGSGate-Source Voltage 20 VTA=25C A2.5a cIDDrain Current-Continuous TA=70C 2 AcIDMA-Pulsed 16dEAS mJSingle Pulse Avalanche Energy 9.6TA=25C 3 WaPD Maximum Power DissipationTA=70C W1.9Operating Junction and Storage TJ, TSTG Temperature Range -55 to 150 CTHERMAL CHARACTERISTICSaR JA Thermal Resistance, Junction-to-Ambient 42 C/WDetails are

 

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