View stu10n25 std10n25 datasheet:

STU10N25GreenProductSTD10N25aS mHop Microelectronics C orp.Ver 1.0N-Channel Logic Level Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) (m) MaxRugged and reliable.250V 9A 258 @ VGS=10VTO-252 and TO-251 Package.GSSTU SERIESSTD SERIES( )TO - 252AA D- PAK ( )TO - 251 I - PAKABSOLUTE MAXIMUM RATINGS (TC=25C unless otherwise noted)Symbol Parameter UnitsLimitVDSDrain-Source Voltage 250 VVGS Gate-Source Voltage 20 VATC=25C 9a eIDDrain Current-Continuous TC=100C 5.7 AbIDMA-Pulsed 25dEAS mJSingle Pulse Avalanche Energy 20TC=25 C W42PD Maximum Power DissipationTC=100C 17 WOperating Junction and Storage -55 to 150TJ, TSTG Temperature Range CTHERMAL CHARACTERISTICSR JC Thermal Resistance, Junction-to-Case

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