View stw77n65m5 datasheet:

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor STW77N65M5FEATURESWith TO-247 packageLow input capacitance and gate chargeLow gate input resistanceEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 650 VDSSV Gate-Source Voltage 25 VGSSDrain Current-Continuous @Tc=2569I AD41.5Tc=100I Drain Current-Single Pulsed 276 ADMP Total Dissipation @T =25 400 WD CTj Max. Operating Junction Temperature 150 Storage Temperature -55~150 TstgTHERMAL CHARACTERISTICSSYMBOL PARAMETER MAX UNIT/WRth(ch-c) Channel-to-case thermal resistance 0.31/WRth(ch-a) Channel-to-ambient thermal resistance 501isc

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