View suv90n06-05 datasheet:

SUV90N06-05New ProductVishay SiliconixN-Channel 60-V (D-S) 200_C MOSFETFEATURESPRODUCT SUMMARYD TrenchFETr Power MOSFETSV(BR)DSS (V) rDS(on) (W) ID (A)D 200_C Junction Temperature0.0052 @ VGS = 10 VD PWM Optimized60 90 a0.0072 @ VGS = 4.5 VAPPLICATIONSD Isolated DC/DC Converters- Primary-Side SwitchD Automotive- Fan MotorsDTO-262- 12-V Boardnet- Motor Drives1 2 3GG D SSTop ViewSUV90N06-05 N-Channel MOSFETABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED)Parameter Symbol Limit UnitDrain-Source Voltage VDS 60Gate-Source Voltage VGS V"20TC = 25_C90aContinuous Drain Current (TJ = 175_C) ID_TC = 125_C 90aAPulsed Drain Current IDM 240Avalanche Current IAR 75Repetitive Avalanche Energyb L = 0.1 mH EAR 280 mJTC = 25_C 350cMaximum Power Dissipationb PD WTA = 25_Cd 4.3Operating Junction and Storag

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 suv90n06-05.pdf Design, MOSFET, Power

 suv90n06-05.pdf RoHS Compliant, Service, Triacs, Semiconductor

 suv90n06-05.pdf Database, Innovation, IC, Electricity