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View swyn7n65d datasheet:

swyn7n65dswyn7n65d

SW7N65DN-channel Enhanced mode TO-220FTN MOSFETFeaturesTO-220FTBVDSS : 650V High ruggedness ID : 7A Low RDS(ON) (Typ 1.1)@VGS=10VRDS(ON) : 1.1 Low Gate Charge (Typ 30nC) Improved dv/dt Capability 12D 100% Avalanche Tested3 Application:Charger,LED,PC Power1. Gate 2. Drain 3. Source GGeneral DescriptionSThis power MOSFET is produced with advanced technology of SAMWIN.This technology enable the power MOSFET to have better characteristics, including fastswitching time, low on resistance, low gate charge and especially excellent avalanchecharacteristics. Order CodesItem Sales Type Marking Package Packaging1 SW YN 7N65D SW7N65D TO-220FTN TUBEAbsolute maximum ratingsSymbol Parameter Value UnitVDSS Drain to source voltage 650 VContinuous drain current (@TC=25oC) 7* AIDContinuous drain current (@TC=100oC) 4.4

 

Keywords - ALL TRANSISTORS DATASHEET

 swyn7n65d.pdf Design, MOSFET, Power

 swyn7n65d.pdf RoHS Compliant, Service, Triacs, Semiconductor

 swyn7n65d.pdf Database, Innovation, IC, Electricity

 

 
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