View tip36ct4tl datasheet:

TIP36CT4TLSilicon PNP Power TransistorDESCRIPTIONDC Current Gain-: h = 25(Min)@I = -1.5AFE CCollector-Emitter Sustaining Voltage-: V = -100V(Min)CEO(SUS)Complement to Type TIP35CCurrent Gain-Bandwidth Product-: f = 3.0MHz(Min)@I = -1.0AT CAPPLICATIONSDesigned for use in general purpose power amplifier andswitching applications.ABSOLUTE MAXIMUM RATINGS (T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage -100 VCBOV Collector-Emitter Voltage -100 VCEOV Emitter-Base Voltage -5 VEBOI Collector Current-Continuous -25 ACI Collector Current-peak -40 ACMI Base Current -5 ABP Collector Power Dissipation@T =25 125 WC CT Junction Temperature 150 jT Storage Temperature Range -65~150 stgTHERMAL CHARACTERISTICSSYMBOL PARAMETER MAX UNITR Thermal Resistance,Junction to Case 1.0 /Wth j-c O

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