View tip41d datasheet:

isc Silicon NPN Power Transistors TIP41DDESCRIPTIONDC Current Gain -h = 30(Min)@ I = 0.3AFE CCollector-Emitter Sustaining Voltage-: V = 120V(Min)CEO(SUS)Complement to Type TIP42DMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in general purpose amplifer and switchingapplicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 160 VCBOV Collector-Emitter Voltage 120 VCEOV Emitter-Base Voltage 5 VEBOI Collector Current-Continuous 6 ACI Collector Current-Peak 10 ACMI Base Current 3 ABCollector Power Dissipation65T =25CP WCCollector Power Dissipation2T =25aT Junction Temperature 150 jT Storage Temperature Range -65~150 stgTHERMAL CHARACTERISTICSSYMBOL PARAMETER MAX UNITR Thermal Res

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