All Transistors. Datasheet

 

View tip41e datasheet:

tip41etip41e

isc Silicon NPN Power Transistors TIP41EDESCRIPTIONDC Current Gain -h = 30(Min)@ I = 0.3AFE CCollector-Emitter Sustaining Voltage-: V = 140V(Min)CEO(SUS)Complement to Type TIP42EMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in general purpose amplifer and switchingapplicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 180 VCBOV Collector-Emitter Voltage 140 VCEOV Emitter-Base Voltage 5 VEBOI Collector Current-Continuous 6 ACI Collector Current-Peak 10 ACMI Base Current 3 ABCollector Power Dissipation65T =25CP WCCollector Power Dissipation2T =25aT Junction Temperature 150 jT Storage Temperature Range -65~150 stgTHERMAL CHARACTERISTICSSYMBOL PARAMETER MAX UNITR Thermal Res

 

Keywords - ALL TRANSISTORS DATASHEET

 tip41e.pdf Design, MOSFET, Power

 tip41e.pdf RoHS Compliant, Service, Triacs, Semiconductor

 tip41e.pdf Database, Innovation, IC, Electricity

 

 
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