View tip42f datasheet:

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistors TIP42F DESCRIPTIONDC Current Gain -hFE = 30(Min)@ IC= -0.3A Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -160V(Min) Complement to Type TIP41F APPLICATIONS Designed for use in general purpose amplifer and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25)SYMBOL PARAMETER VALUE UNITVCBO Collector-Base Voltage -200 V VCEO Collector-Emitter Voltage -160 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -6 A ICM Collector Current-Peak -10 A IBB Base Current -3 A Collector Power Dissipation 65 TC=25 PC W Collector Power Dissipation 2 Ta=25 Tj Junction Temperature 150 Storage Temperature Range -65~150 TstgTHERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNITThermal Resistance,Junction to Case 1.92 /W

Keywords - ALL TRANSISTORS DATASHEET

 tip42f.pdf Design, MOSFET, Power

 tip42f.pdf RoHS Compliant, Service, Triacs, Semiconductor

 tip42f.pdf Database, Innovation, IC, Electricity