View tpcm8001-h datasheet:

TPCM8001-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (Ultra-High-Speed U-MOSIII) TPCM8001-H High-Efficiency DCDC Converter Applications Unit: mmNotebook PC Applications 0.250.050.80.05 M A8 5Portable-Equipment Applications 0.200.2 Small footprint due to a small and thin package High-speed switching 0.5541 Small gate charge: QSW = 6.0 nC (typ.) A Low drain-source ON-resistance: RDS (ON) = 7 m (typ.) 3.50.2 High forward transfer admittance: |Yfs| =36 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 30 V) 0.05 SS Enhancement mode: Vth = 1.1 to 2.3 V (VDS = 10 V, ID = 1 mA) 1 42.750.2Absolute Maximum Ratings (Ta = 25C) 0.80.18 51,2,3SOURCE 4GATECharacteristic Symbol Rating Unit5,6,7,8DRAIN Drain-source voltage VDSS 30 VJEDEC Drain-gate v

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