View tpcm8002-h datasheet:

TPCM8002-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS-H) TPCM8002-H High-Efficiency DC-DC Converter Applications Unit: mmNotebook PC Applications 0.050.250.80.05 M A5Portable Equipment Applications 80.200.2 Small footprint due to a small and thin package High-speed switching 0.5541 Small gate charge: QSW = 9.3 nC (typ.) A Low drain-source ON-resistance: RDS (ON) = 4.7 m (typ.) 0.23.5 High forward transfer admittance: |Yfs| = 76 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 30 V) 0.05 SS Enhancement mode: Vth = 1.5 to 2.5 V (VDS = 10 V, ID = 1 mA) 1 4Absolute Maximum Ratings (Ta = 25C) 0.22.750.80.1Characteristic Symbol Rating Unit8 5Drain-source voltage VDSS 30 V1,2,3:SOURCE 4:GATE 5,6,7,8:DRAIN Drain-gate voltage (RGS = 20 k)

Keywords - ALL TRANSISTORS DATASHEET

 tpcm8002-h.pdf Design, MOSFET, Power

 tpcm8002-h.pdf RoHS Compliant, Service, Triacs, Semiconductor

 tpcm8002-h.pdf Database, Innovation, IC, Electricity