View tpcm8004-h datasheet:

TPCM8004-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS V-H) TPCM8004-H High-Efficiency DC-DC Converter Applications Unit: mmNotebook PC Applications 0.250.050.80.05 M APortable Equipment Applications 8 50.200.2 Small footprint due to a small and thin package High-speed switching 0.5541 Small gate charge: QSW = 5.0 nC (typ.) A Low drain-source ON-resistance: RDS (ON) = 7.3 m (typ.) 3.50.2 High forward transfer admittance: |Yfs| = 60 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 30 V) 0.05 SS Enhancement mode: Vth = 1.5 to 2.5 V (VDS = 10 V, ID = 1 mA) 1 4Absolute Maximum Ratings (Ta = 25C) 2.750.20.80.1Characteristic Symbol Rating Unit8 5Drain-source voltage VDSS 30 V1, 2, 3: SOURCE 4: GATE5, 6, 7, 8: DRAIN Drain-gate voltage (RGS = 20 k) VD

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