View tsa23n50m datasheet:

TSA23N50M500V N-Channel MOSFETGeneral DescriptionFeaturesThis Power MOSFET is produced using Truesemisadvanced planar stripe DMOS technology. 23A,500V,Max.RDS(on)=0.26 @ VGS =10VThis advanced technology has been especially tailored to Low gate charge(typical 70nC)minimize on-state resistance, provide superior switching High ruggednessperformance, and withstand high energy pulse in the Fast switchingavalanche and commutation mode. These devices are wellsuited for high efficiency switched mode power supplies, 100% avalanche testedactive power factor correction based on half bridge Improved dv/dt capability topology.Absolute Maximum Ratings TJ=25 unless otherwise specifiedSymbol Parameter Value UnitsVDSSDrain-Source Voltage 500 VVGSGate-Source Voltage 30 VTC = 2523 AIDDrain Current TC = 10015 A

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