View vsp040c04md datasheet:

VSP040C04MD40V N+P Channel Advanced Power MOSFETV DS 40 -40 VFeaturesR DS(on),TYP@ VGS=10 V 26 28 m N+P ChannelR DS(on),TYP@ VGS=4.5V 40 43 m Enhancement modeI D 20 -22 A Low on-resistance RDS(on) @ VGS=4.5 V Fast Switching and High efficiencyPDFN5x6 Dual Pb-free lead plating; RoHS compliantPart ID Package Type Marking PackingVSP040C04MD PDFN5x6 Dual 040C04MD 3000pcs/ReelMaximum ratings, at TA =25C, unless otherwise specifiedRatingSymbol Parameter UnitNMOS PMOS40 -40 VV(BR)DSS Drain-Source breakdown voltageVGS Gate-Source voltage 20 20 V=25CIS TCDiode continuous forward current 20 -22 A=25CTC20 -22 AIDContinuous drain current @VGS=10V=100CTC12 -14 A=25CIDM TCPulse drain current tested 80 -88 AT =25C 7.5 -7 AAI Continuous drain current @VGS=10VDSMT =70C 6

Keywords - ALL TRANSISTORS DATASHEET

 vsp040c04md.pdf Design, MOSFET, Power

 vsp040c04md.pdf RoHS Compliant, Service, Triacs, Semiconductor

 vsp040c04md.pdf Database, Innovation, IC, Electricity