View wff18n50 datasheet:

WFF18N50WFF18N50WFF18N50WFF18N50Silicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETFeatures 18A,500V,R (Max0.27)@V =10VDS(on) GS Ultra-low Gate charge(Typical 42nC) Fast Switching Capability 100%Avalanche Tested Maximum Junction Temperature Range(150)General DescriptionThis Power MOSFET is produced using Winsemi's advancedplanarstripe,VDMOS technology.this latest technology has beenespeciallydesigned to minimize on-state resistance, have a high rugged avalanchecharacteristics .This devices is specially wellsuited for AC-DC switchingpower supplies, DC-DC powerConverters high voltage H-bridge motordrive PWMAbsolute Maximum RatingsSymbol Parameter Value UnitsV Drain Source Voltage 500 VDSSContinuous Drain Current(@Tc=25) 18 AIDContinuous Drain Current(@Tc=100)

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