View wff20n60s datasheet:

WFF20N60SWFF20N60SWFF20N60SWFF20N60SSilicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETFeatures Ultra low Rdson Ultra-low Gate charge(Typical 68nC) 100% UIS Tested RoHS compliantGeneral DescriptionWinsemi Power MOSFET is fabricated using advanced superjunction technology.The resulting device has extremely low onresistance,making it especially suitable for applications whichrequire superior power density and outstanding efficiency.Absolute Maximum RatingsSymbol Parameter Value UnitsV Drain Source Voltage 600 VDSSContinuous Drain Current(@Tc=25) 20I AD(@Tc=100) 13I Drain Current Pulsed1) 60 ADMV Gate to Source Voltage 30 VGSE Single Pulse Avalanche Energy2) 700 mJASI Single Pulse Avalanche Current1) 20 AAR1)E Repetitive Avalanche Energy 20.5 mJARTota

Keywords - ALL TRANSISTORS DATASHEET

 wff20n60s.pdf Design, MOSFET, Power

 wff20n60s.pdf RoHS Compliant, Service, Triacs, Semiconductor

 wff20n60s.pdf Database, Innovation, IC, Electricity