View wff7n65s datasheet:

WFF7N65SWFF7N65SWFF7N65SWFF7N65S650V Super-Junction Power MOSFET650V Super-Junction Power MOSFET650V Super-Junction Power MOSFET650V Super-Junction Power MOSFETFeaturesD Ultra low Rdson Ultra low gate charge (typ. Qg =19nC) 100% UIS testedG RoHS compliantSGeneral DescriptionPower MOSFET is fabricated using advanced super junctiontechnology. The resulting device has extremely low onresistance, making it especially suitable for applications whichrequiresuperior power density and outstanding efficiency.Absolute Maximum RatingsSymbol Parameter Value UnitsVDSS Drain Source Voltage 650 VContinuous Drain Current (Tc=25) 7I AD(Tc=100) 4.41)I Drain Current Pulsed 21 ADMV Gate to Source Voltage 30 VGS2)E Single Pulse Avalanche Energy 230 mJAS1)I Single Pulse Avalanche Current 7 AAR1)E Repetitiv

Keywords - ALL TRANSISTORS DATASHEET

 wff7n65s.pdf Design, MOSFET, Power

 wff7n65s.pdf RoHS Compliant, Service, Triacs, Semiconductor

 wff7n65s.pdf Database, Innovation, IC, Electricity