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wfw18n50wfw18n50

WFW18N50WFW18N50WFW18N50WFW18N50Silicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETFeatures 18A,500V,R (Max0.27)@V =10VDS(on) GS Ultra-low Gate charge(Typical 42nC) Fast Switching Capability100%Avalanche TestedMaximum Junction Temperature Range(150)General DescriptionThese N-Channel enhancement mode power field effecttransistors are produced using Winsemis proprietary, planarstripe, DMOS technology.This advanced technology has been especially tailored tominimize on-state resistance, provide superior switchingperformance, and withstand high energy pulse in theavalanche and commutation mode. These devices are wellsuited for high efficiency switch mode power supplies.Absolute Maximum RatingsSymbol Parameter Value UnitsV Drain Source Voltage 500 VDSSContinuous D

 

Keywords - ALL TRANSISTORS DATASHEET

 wfw18n50.pdf Design, MOSFET, Power

 wfw18n50.pdf RoHS Compliant, Service, Triacs, Semiconductor

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