View wfw18n50n datasheet:

WFW18N50NWFW18N50NWFW18N50NWFW18N50NSilicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETFeatures 18A,500V,R (Max0.27)@V =10VDS(on) GS Ultra-low Gate charge(Typical 42nC) Fast Switching Capability 100%Avalanche Tested Maximum Junction Temperature Range(150)General DescriptionThis Power MOSFET is produced using Winsemi's advanced planarstripe,VDMOS technology.this latest technology has been especiallydesigned to minimize on-state resistance, have a high ruggedavalanche characteristics .This devices is specially wellsuited forAC-DC switching power supplies, DC-DC power Converters highvoltage H-bridge motor drive PWMAbsolute Maximum RatingsSymbol Parameter Value UnitsV Drain Source Voltage 500 VDSSContinuous Drain Current(@Tc=25) 18 AIDContinuous Drain Current(@Tc=

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