All Transistors. Datasheet

 

View 1ss300 datasheet:

POWER MOSFET, IGBT, IC, TRIACS DATABASE. Electronic Supply. INNOVATION CATALOG

1ss300_

1SS300 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS300 Ultra High Speed Switching Applications Unit: mm Small package : SC-70 Low forward voltage : V = 0.92V (typ.) F (3) Fast reverse recovery time : t = 1.6ns (typ.) rr Small total capacitance : CT = 2.2pF (typ.) Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Maximum (peak) reverse voltage VRM 85 V Reverse voltage VR 80 V Maximum (peak) forward current IFM 300 (*) mA Average forward current IO 100 (*) mA Surge current (10ms) IFSM 2 (*) A Power dissipation P 100 mW Junction temperature Tj 125 °C JEDEC ? Storage temperature Tstg -55~125 °C EIAJ SC-70 TOSHIBA 1-2P1A *: Unit rating. Total rating = unit rating ? 1.5 Weight: 0.006g Electrical Characteristics (Ta = 25°C) Test

Keywords

 1ss300 Datasheet, Design, MOSFET, Power

 1ss300 RoHS, Compliant, Service, Triacs, Semiconductor

 1ss300 Database, Innovation, IC, Electricity

 

 
Back to Top

 


 
.