View 1ss302 datasheet:

1SS302 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS302 Ultra High Speed Switching Applications Unit: mm Small package : SC-70 Low forward voltage : V = 0.90V (typ.) F (3) Fast reverse recovery time : t = 1.6ns (typ.) rr Small total capacitance : CT = 0.9pF (typ.) Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Maximum (peak) reverse voltage VRM 85 V Reverse voltage VR 80 V Maximum (peak) forward current IFM 300 (*) mA Average forward current IO 100 (*) mA Surge current (10ms) IFSM 2 (*) A Power dissipation P 100 mW Junction temperature Tj 125 °C JEDEC ? Storage temperature Tstg -55~125 °C EIAJ SC-70 TOSHIBA 1-2P1C *: Unit rating. Total rating = unit rating ? 0.7 Weight: 0.006g Electrical Characteristics (Ta = 25°C) Test