View 1ss306 datasheet:

1SS306 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS306 High Voltage,High Speed Switching Applications Unit: mm Low forward voltage : VF (2) = 0.90V (typ.) Fast reverse recovery time : t = 30ns (max) rr Small total capacitance : C = 1.5pF (typ.) T Small package : SC-61 Maximum Ratings (Ta = 25�C) Characteristic Symbol Rating Unit Maximum (peak) reverse voltage VRM

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BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050