View 1ss306 datasheet:

1SS306 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS306 High Voltage,High Speed Switching Applications Unit: mm Low forward voltage : VF (2) = 0.90V (typ.) Fast reverse recovery time : t = 30ns (max) rr Small total capacitance : C = 1.5pF (typ.) T Small package : SC-61 Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Maximum (peak) reverse voltage VRM 250 V Reverse voltage VR 200 V Maximum (peak) forward current IFM 300 (*) mA Average forward current IO 100 (*) mA Surge current (10ms) IFSM 2 (*) A Power dissipation P 150 mW Junction temperature Tj 125 °C JEDEC ? Storage temperature Tstg -55~125 °C EIAJ SC-61 TOSHIBA 2-3J1A *: Unit rating. Total rating = unit rating ? 1.5 Weight: 0.013g Electrical Characteristics (Ta = 25°C)