View 1ss307 datasheet:

1SS307 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS307 General Puropose Rectifier Applications Unit: mm Low forward voltage : VF = 1.0V (typ.) Low reverse current : I = 0.1nA (typ.) R Small total capacitance : C = 3.0pF (typ.) T Small package : SC-59 Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Maximum (peak) reverse voltage VRM 35 V Reverse voltage VR 30 V Maximum (peak) forward current IFM 300 mA Average forward current IO 100 mA Surge current (10ms) IFSM 2 A Power dissipation P 150 mW Junction temperature Tj 125 °C JEDEC TO-236MOD Storage temperature Tstg -55 125 °C EIAJ SC-59 1-3G1B TOSHIBA Electrical Characteristics (Ta = 25°C) Weight: 0.012g Test Characteristic Symbol Test Condition Min Typ. Max Unit Circuit For