View 1ss309 datasheet:

1SS309 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS309 Ultra High Speed Switching Applications Unit: mm Small package : SC-74A Low forward voltage : V = 0.90V (typ.) F (3) Fast reverse recovery time : t = 1.6ns (typ.) rr Small total capacitance : CT = 0.9pF (typ.) Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Maximum (peak) reverse voltage VRM 85 V Reverse voltage VR 80 V Maximum (peak) forward current IFM 300 (*) mA Average forward current IO 100 (*) mA Surge current (10ms) IFSM 2 (*) A Power dissipation P 200 mW Junction temperature Tj 125 °C JEDEC ? Storage temperature Tstg -55 125 °C EIAJ SC-74A (*) Unit rating. Total rating = unit rating ? 1.5 1-3H1B TOSHIBA Weight: 0.014g Electrical Characteristics (Ta = 25°C) Te