View 2n3771re datasheet:
POWER MOSFET, IGBT, IC, TRIACS DATABASE. Electronic Supply. INNOVATION CATALOG
Order this document MOTOROLA by 2N3771/D SEMICONDUCTOR TECHNICAL DATA * 2N3771 High Power NPN Silicon Power 2N3772 Transistors *Motorola Preferred Device . . . designed for linear amplifiers, series pass regulators, and inductive switching 20 and 30 AMPERE applications. POWER TRANSISTORS • Forward Biased Second Breakdown Current Capability NPN SILICON IS/b = 3.75 Adc @ VCE = 40 Vdc — 2N3771 40 and 60 VOLTS IIIIIIIIIIIIIIIIIIIIIII IS/b = 2.5 Adc @ VCE = 60 Vdc — 2N3772 150 WATTS IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIII IIII III IIIII IIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIII IIII III IIIIIIIIIII IIII III IIIII IIII IIIII IIII *MAXIMUM RATINGS IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIII IIII III IIIIIIIIIII IIII III IIIIIIIIIII IIII III IIIII IIII IIIII IIII IIIII IIII
Keywords
2n3771re Datasheet, Design, MOSFET, Power
2n3771re RoHS, Compliant, Service, Triacs, Semiconductor
2n3771re Database, Innovation, IC, Electricity
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