View 2n3773re datasheet:
POWER MOSFET, IGBT, IC, TRIACS DATABASE. Electronic Supply. INNOVATION CATALOG
Order this document MOTOROLA by 2N3773/D SEMICONDUCTOR TECHNICAL DATA NPN 2N3773* Complementary Silicon Power PNP 2N6609 Transistors The 2N3773 and 2N6609 are PowerBase power transistors designed for high *Motorola Preferred Device power audio, disk head positioners and other linear applications. These devices can also be used in power switching circuits such as relay or solenoid drivers, dc to dc 16 AMPERE converters or inverters. COMPLEMENTARY • High Safe Operating Area (100% Tested) 150 W @ 100 V POWER TRANSISTORS • Completely Characterized for Linear Operation 140 VOLTS • High DC Current Gain and Low Saturation Voltage 150 WATTS hFE = 15 (Min) @ 8 A, 4 V VCE(sat) = 1.4 V (Max) @ IC = 8 A, IB = 0.8 A • For Low Distortion Complementary Designs CASE 1–07 IIIIIIIIII
Keywords
2n3773re Datasheet, Design, MOSFET, Power
2n3773re RoHS, Compliant, Service, Triacs, Semiconductor
2n3773re Database, Innovation, IC, Electricity
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