View 2n4400-4401 datasheet:

2N4400/4401 NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR TO-92 • Collector-Emitter Voltage: VCEO= 40V • Collector Dissipation: PC (max)=625mW ABSOLUTE MAXIMUM RATINGS (T =25 ) A Characteristic Symbol Rating Unit Collector-Base Voltage VCBO 60 V Collector-Emitter Voltage VCEO 40 V Emitter-Base Voltage VEBO 6 V Collector Current IC 600 mA Collector Dissipation PC 625 mW Junction Temperature TJ 150 Storage Temperature TSTG -55 ~ 150 1.Emitter 2.Base 3. Collector ELECTRICAL CHARACTERISTICS (T =25 ) A Characteristic Symbol Test Conditions Min Typ Max Unit 60 Collector-Base Breakdown Voltage BVCBO IC=100 , IE=0 Collector-Emitter Breakdown Voltage BVCEO IC=1mA, IB=0 40 V V Emitter-Base Breakdown Voltage BVEBO IE=100 , IC=0 6 nA Collector Cut-off Curren