View 2n4402-4403 datasheet:

2N4402/4403 PNP EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR TO-92 • Collector-Emitter Voltage: VCEO= 40V • Collector Dissipation: PC (max)=625mW ABSOLUTE MAXIMUM RATINGS (T =25 ) A Characteristic Symbol Rating Unit Collector-Base Voltage VCBO -40 V Collector-Emitter Voltage VCEO -40 V Emitter-Base Voltage VEBO -5 V Collector Current IC -600 mA Collector Dissipation PC 625 mW Junction Temperature TJ 150 Storage Temperature TSTG -55 ~ 150 • Refer to 2N4403 for graphs 1.Emitter 2.Base 3. Collector ELECTRICAL CHARACTERISTICS (T =25 ) A Characteristic Symbol Test Conditions Min Typ Max Unit -40 Collector-Base Breakdown Voltage BVCBO IC= -100 , IE=0 Collector-Emitter Breakdown Voltage BVCEO IC= -1mA, IB=0 -40 V V Emitter-Base Breakdown Voltage BVEBO IE= -1