View 2n5550 datasheet:

AmpIifier Transistor • Collector-Emitter Voltage: VCEO= 140V • Collector Dissipation: PC (max)=625mW TO-92 1. Emitter 2. Base 3. Collector NPN EpitaxiaI SiIicon Transistor AbsoIute Maximum Ratings Ta=25°C unless otherwise noted SymboI Parameter VaIue Units VCBO Collector-Base Voltage 160 V VCEO Collector-Emitter Voltage 140 V VEBO Emitter-Base Voltage 6 V IC Collector Current 600 mA PC Collector Dissipation 625 mW TJ Junction Temperature 150 °C TSTG Storage Temperature -55 ~ 150 °C • Refer to 2N5551 for graphs EIectricaI Characteristics Ta=25°C unless otherwise noted SymboI Parameter Test Condition Min. Typ. Max. Units BVCBO Collector-Base Breakdown Voltage IC=100µA, IE=0 160 V BVCEO * Collector-Emitter Breakdown Voltage IC=1mA, IB=0 140 V BVEBO Emi