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2n5550_5551_3

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 2N5550; 2N5551 NPN high-voltage transistors 1999 Apr 23 Product specification Supersedes data of 1997 Apr 09 Philips Semiconductors Product specification NPN high-voltage transistors 2N5550; 2N5551 FEATURES PINNING • Low current (max. 300 mA) PIN DESCRIPTION • High voltage (max. 160 V). 1 collector 2 base APPLICATIONS 3 emitter • Switching and amplification in high voltage applications such as telephony. 1 handbook, halfpage 1 2 DESCRIPTION 3 2 NPN high-voltage transistor in a TO-92; SOT54 plastic package. PNP complements: 2N5400 and 2N5401. 3 MAM279 Fig.1 Simplified outline (TO-92; SOT54) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER

Keywords

 2n5550 5551 3 Datasheet, Design, MOSFET, Power

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 2n5550 5551 3 Database, Innovation, IC, Electricity

 

 
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