View 2n5551 utc datasheet:

UTC 2N5551 NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR FEATURES * High Collector-Emitter Voltage: VCEO=160V *High current gain 1 APPLICATIONS *Telephone switching circuit *Amplifier TO-92 1:EMITTER 2:BASE 3:COLLECTOR ABSOLUTE MAXIMUM RATINGS ( Ta=25°C ,unless otherwise specified ) PARAMETERS SYMBOL RATING UNIT Collector-base voltage VCBO 180 V Collector-emitter voltage VCEO 160 V Emitter-base voltage VEBO 6 V Collector dissipation Pc 625 mW Collector current Ic 600 mA Junction Temperature Tj 150 °C Storage Temperature TSTG -55 ~ +150 °C ELECTRICAL CHARACTERISTICS(Ta=25°C,unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT Collector-base breakdown voltage BVCBO Ic=100µA,IE=0 180 V Collector-emitter breakdown voltag