View 2n5555rev0x datasheet:

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by 2N5555/D JFET Switching N–Channel — Depletion 1 DRAIN 2N5555 3 GATE 2 SOURCE MAXIMUM RATINGS Rating Symbol Value Unit Drain–Source Voltage VDS 25 Vdc 1 Drain–Gate Voltage VDG 25 Vdc 2 3 Gate–Source Voltage VGS 25 Vdc Forward Gate Current IGF 10 mAdc CASE 29–04, STYLE 5 TO–92 (TO–226AA) Total Device Dissipation @ TC = 25°C PD 350 mW Derate above 25°C 2.8 mW/°C Junction Temperature Range TJ –65 to +150 °C Storage Temperature Range Tstg –65 to +150 °C ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Gate–Source Breakdown Voltage (IG = 10 µAdc, VDS = 0) V(BR)GSS 25 — Vdc Gate Reverse Current (VGS = 15 Vdc, VDS = 0) IGSS — 1.0 nAdc Drain