View 2n5883re datasheet:

Order this document MOTOROLA by 2N5883/D SEMICONDUCTOR TECHNICAL DATA PNP 2N5883 Complementary Silicon High-Power Transistors 2N5884* NPN . . . designed for general�purpose power amplifier and switching applications. � Low Collector�Emitter Saturation Voltage � 2N5885 VCE(sat) = 1.0 Vdc, (max) at IC = 15 Adc � Low Leakage Current 2N5886* ICEX = 1.0 mAdc (max) at Rated Voltage � Excellent DC Current Gain � *Motorola Preferred Device hFE = 20 (min) at IC = 10 Adc IIIIIIIIIIIIIIIIIIIIIII � High Current Gain Bandwidth Product � f? = 4.0 MHz (min) at IC = 1.0 Adc 25 AMPERE IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIII IIII III IIIII IIII COMPLEMENTARY IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIII IIII III IIIII IIII SILICON MAXIMUM RATINGS (1) IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIII II