View 2n7000bu datasheet:

Advanced Small Signal MOSFET 2N7000BU/2N7000TA FEATURES BVDSS = 60 V n Fast Switching Times RDS(on) = 5.0 ? n Improved Inductive Ruggedness n Lower Input Capacitance ID = 200 mA n Extended Safe Operating Area n Improved High Temperature Reliability TO-92 1.Source 2. Gate 3. Drain Absolute Maximum Ratings Symbol Characteristic Value Units VDSS Drain-to-Source Voltage V 60 Continuous Drain Current (TC=25?) 200 ID mA Continuous Drain Current (TC=100?) 110 IDM Drain Current-Pulsed ? 1000 mA VGS Gate-to-Source Voltage ±30 V Total Power Dissipation (TC=25?) 400 mW PD Linear Derating Factor 3.2 mW/? Operating Junction and TJ , TSTG - 55 to +150 Storage Temperature Range ? Maximum Lead Temp. for Soldering TL 300 Purposes, 1/8? from case for 5-seconds Thermal Re