View 2sa1011 datasheet:

Ordering number:ENN544G PNP/NPN Epitaxial Planar Silicon Transistors 2SA1011/2SC2344 High-Voltage Switching, AF Power Amp, 100W Output Predriver Applications Package Dimensions unit:mm 2010C [2SA1011/2SC2344] 10.2 4.5 3.6 5.1 1.3 1.2 0.8 0.4 1 2 3 1 : Base ( ) : 2SA1011 2 : Collector 3 : Emitter 2.55 2.55 Specifications SANYO : TO220AB Absolute Maximum Ratings at Ta = 25?C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO (–)180 V Collector-to-Emitter Voltage VCEO (–)160 V Emitter-to-Base Voltage VEBO (–)6 V Collector Current IC (–)1.5 A Collector Current (Pulse) ICP (–)3 A Collector Dissipation PC Tc=25?C 25 W Junction Temperature Tj 150 ?C Storage Temperature Tstg –55 to +150 ?C Electrical Characteristics at Ta = 25?C Ratings Par