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2sa1012_utc

UTC A1012 SILICON PNP EPITAXIAL TRANSISTOR SILICON PNPEPITAXIAL TRANSISTOR DESCRIPTION The A1012 is designed for silicon current switching application. FEATURES *Low collector saturation voltage Vce(sat)=-0.4V(MAX.) at Ic=-3A *High speed switching time Tstg=1.0us(Typ.) *Complementary to 2SC2562 TO-220 1:BASE 2: COLLECTOR 3: EMITTER ABSOLUTE MAXIMUM RATINGS ( Operating temperature

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