All Transistors. Datasheet

 

View 2sa1015 datasheet:

POWER MOSFET, IGBT, IC, TRIACS DATABASE. Electronic Supply. INNOVATION CATALOG

2sa1015

2SA1015 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1015 Audio Frequency General Purpose Amplifier Applications Unit: mm Driver Stage Amplifier Applications • High voltage and high current: VCEO = -50 V (min), I = -150 mA (max) C • Excellent h linearity: h = 80 (typ.) at V = -6 V, I = -150 mA FE FE (2) CE C : hFE (IC = -0.1 mA)/hFE (IC = -2 mA) = 0.95 (typ.) • Low noise: NF = 1dB (typ.) (f = 1 kHz) • Complementary to 2SC1815. Maximum Ratings (Ta = = 25°C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO -50 V Collector-emitter voltage VCEO -50 V Emitter-base voltage VEBO -5 V Collector current IC -150 mA JEDEC TO-92 Base current IB -50 mA JEITA SC-43 Collector power dissipation PC 400 mW TOSHIBA 2-5F1B Junction

Keywords

 2sa1015 Datasheet, Design, MOSFET, Power

 2sa1015 RoHS, Compliant, Service, Triacs, Semiconductor

 2sa1015 Database, Innovation, IC, Electricity

 

 
Back to Top

 


 
.