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2sa1015l

2SA1015(L) TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1015(L) Audio Frequency Amplifier Applications Unit: mm Low Noise Amplifier Applications • High voltage and high current: VCEO = -50 V (min), I = -150 mA (max) C • Excellent h linearity: h (2) = 80 (typ.) at V = -6 V, I = -150 mA FE FE CE C : hFE (IC = -0.1 mA)/hFE (IC = -2 mA) = 0.95 (typ.) • Low noise: NF = 0.2dB (typ.) (f = 1 kHz) • Complementary to 2SC1815 (L) Maximum Ratings (Ta = = 25°C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO -50 V Collector-emitter voltage VCEO -50 V Emitter-base voltage VEBO -5 V Collector current IC -150 mA JEDEC TO-92 Base current IB -50 mA JEITA SC-43 Collector power dissipation PC 400 mW TOSHIBA 2-5F1B Junction temperat

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 2sa1015l RoHS, Compliant, Service, Triacs, Semiconductor

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