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POWER MOSFET, IGBT, IC, TRIACS DATABASE. Electronic Supply. INNOVATION CATALOG

2sa1123_e

Transistor 2SA1123 Silicon PNP epitaxial planer type For low-frequency high breakdown voltage amplification Unit: mm Complementary to 2SC2631 5.0± 0.2 4.0± 0.2 Features Satisfactory foward current transfer ratio hFE collector current IC characteristics. High collector to emitter voltage VCEO. Small collector output capacitance Cob. Makes up a complementary pair with 2SC2631, which is opti- mum for the pre-driver stage of a 20 to 40W output amplifier. +0.2 +0.2 0.45 –0.1 0.45 –0.1 Absolute Maximum Ratings (Ta=25?C) 1.27 1.27 Parameter Symbol Ratings Unit Collector to base voltage VCBO –150 V 1 2 3 1:Emitter Collector to emitter voltage VCEO –150 V 2:Collector Emitter to base voltage VEBO –5 V 3:Base 2.54± 0.15 JEDEC:TO–92 Peak collector current ICP –100 mA EIAJ:

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