View 2sa1124 e datasheet:

Transistor 2SA1124 Silicon PNP epitaxial planer type For low-frequency high breakdown voltage amplification Unit: mm Complementary to 2SC2632 5.9± 0.2 4.9± 0.2 Features Satisfactory foward current transfer ratio hFE collector current IC characteristics. High collector to emitter voltage VCEO. 0.7± 0.1 Small collector output capacitance Cob. Makes up a complementary pair with 2SC2632, which is opti- 2.54± 0.15 mum for the pre-driver stage of a 40 to 60W output amplifier. Absolute Maximum Ratings (Ta=25?C) Parameter Symbol Ratings Unit +0.2 +0.2 0.45–0.1 0.45–0.1 Collector to base voltage VCBO –150 V 1.27 1.27 1:Emitter Collector to emitter voltage VCEO –150 V 2:Collector 1 2 3 Emitter to base voltage VEBO –5 V 3:Base EIAJ:SC–51 Peak collector current ICP –100 mA